參數(shù)資料
型號: U62256
廠商: Electronic Theatre Controls, Inc.
英文描述: STANDARD 32K X 8 SRAM
中文描述: 32K的標準× 8的SRAM
文件頁數(shù): 1/9頁
文件大小: 78K
代理商: U62256
U62256
November 01, 2001
1
32768x8 bit static CMOS RAM
Access times 70 ns, 100 ns
Common data inputs and
data outputs
Three-state outputs
Typ. operating supply current
70 ns: 50 mA
100 ns: 40 mA
TTL/CMOS-compatible
Automatical reduction of power
dissipation in long Read Cycles
Power supply voltage 5 V + 10 %
Operating temperature ranges
0 to 70 °C
-40 to 85 °C
CECC 90000 Quality Standard
ESD protection > 2000 V
(MIL STD 883C M3015.7)
Latch-up immunity >100 mA
Package: SOP28 (330 mil)
Standard 32K x 8 SRAM
Features
The U62256 is a static RAM manu-
factured using a CMOS process
technology with the following ope-
rating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
MIXMOS cell.
The circuit is activated by the fal-
ling edge of E. The address and
control inputs open simultaneously.
According to the information of W
and G, the data inputs, or outputs,
are active. In a Read cycle, the
data outputs are activated by the
falling edge of G, afterwards the
data word read will be available at
the outputs DQ0-DQ7. After the
address change, the data outputs
go High-Z until the new information
read is available. The data outputs
have not preferred state.
The Read cycle is finished by the
falling edge of W, or by the rising
edge of E, respectively.
Data retention is guaranteed down
to 2 V. With the exception of E, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required.
Description
Pin Configuration
1
A14
A12
VCC
28
2
W
A13
27
4
A6
A8
25
5
A5
A9
24
3
A7
26
6
A4
A11
23
7
A3
G
A10
22
8
A2
21
12
DQ1
DQ5
17
9
A1
E
DQ7
20
10
A0
19
11
DQ0
DQ6
18
13
DQ2
DQ4
16
14
VSS
DQ3
15
Top View
Signal Name
Signal Description
A0 - A14
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
E
G
W
VCC
VSS
Pin Description
SOP
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