
U6046B / U6047B
TELEFUNKEN Semiconductors
Rev. A2, 03-Feb-97
6 (11)
Absolute Maximum Ratings
Parameters
Symbol
V
Batt
T
amb
T
stg
T
j
Value
24
Unit
V
°
C
°
C
°
C
Operating voltage, static, 5 min
Ambient temperature range
Storage temperature range
Junction temperature
Thermal Resistance
–40 to +125
–
55 to +125
150
Parameters
Symbol
R
thJA
R
thJA
Maximum
110
160
Unit
K/W
K/W
Junction ambient
DIP8
SO8
Electrical Characteristics
V
Batt
=13.5 V, T
amb
= 25
°
C, reference point ground, figure 2, unless otherwise specified
Parameters
Test Conditions / Pin
Operating voltage
R
1
510
t < 5 min
t < 60 min
5 V supply
Without R
1
, C
1
figure 4
Stabilized voltage
V
Batt
= 12 V Pin 7
Undervoltage threshold
Power on reset
Supply current
All push buttons open, Pin
8
Internal Z-diode
I
8
= 10 mA
Relay control output
Pin 2
Saturation voltage
I
2
= 200 mA
I
2
= 300 mA
Leakage current
V
2
= 14 V
Output current
Output pulse current
Load dump pulse
t
300 ms
Internal Z-diode
I
2
= 10 mA
Oscillator input
f = 0.001 to 40 kHz, see table 1 Pin 6
Internal discharge
resistance
Switching voltage
Lower
Upper
Input current
V
6
= 0 V
Switching times
Debounce time
Delay time
Inputs ON, OFF, TOGGLE
Pins 3, 4 and 5
Switching threshold voltage
Internal Z-diode
I
3, 4, 5
= 10 mA
Pull-down resistance
V
3,4,5
= 5 V U 6046 B
Pull-up resistance
V
3,4,5
= 0 V U 6047 B
Symbol
V
Batt
Min
6
Typ
Max
16
24
18
6.0
Unit
V
Pins 7 and 8
V
8
, V
7
4.3
V
V
7
V
S
I
S
5.0
3.0
5.2
5.4
4.2
2.0
V
V
1.3
mA
Pin 8
V
Z
13.5
14
16
V
V
2
1.2
1.5
100
300
V
I
lkg
I
2
2
A
mA
I
2
V
Z
1.5
24
A
V
20
22
V
6
= 5 V
R
6
1.6
2.0
2.4
k
V
6L
V
6H
–I
6
0.9
2.8
1.1
3.1
1.4
3.5
1
V
A
t
3
t
d
5
7
cycles
cycles
72704
74752
V
3,4,5
V
Z
R
3,4,5
R
3,4,5
1.6
6.5
13
70
2.0
7.1
20
100
2.4
8.0
50
140
V
V
k
k