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參數(shù)資料
| 型號： | U4055B |
| 英文描述： | Low-Voltage Electronic Speech Circuit with Dialer Interface |
| 中文描述： | 低壓電路的電子語音撥號接口 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 150K |
| 代理商： | U4055B |
U4055B/U4055B1
TELEFUNKEN Semiconductors
Rev. A1, 06-May-96
Preliminary Information
4 (10)
Electrical Characteristics
Reference point Pin 3, cable equivalent = I = 1 km,
0.5 mm, R’ = 184
, C’ = 37 nF, f = 1300 Hz, 0 dBm = 775 mV
rms,
R
DC
= 56
/ 2 W, T
amb
= 25
°
C, unless otherwise specified.
Parameters
Test Conditions / Pins
I
L
= 8 mA
I
L
= 20 mA
I
L
= 30 mA
I
L
= 73 mA, see figure 4
see figure 5
Pin 7 - 8
I
L
= 30 mA
=
l = 5 km
adjustable with R
AGC
I
L
= 30 to 73 mA
l
= 5
km to
0 km
I
L
= 73 mA
l
= 0
km
V
MIC
= 0 V
I
L
20 mA
see figure 6
Pin 8 - 3
I
L
= 30 mA
I = 5 km
R
ex1
= 0 adjustable with R
ex1
I
L
= 31 mA to 78 mA = l =
5 km to 0 km
Symbol
V
L
Min.
1.8
3.0
3.6
7.7
Typ.
2.1
3.3
Max.
2.6
3.6
4.5
9.7
Unit
V
V
V
V
Line voltage
Transmit and sidetone
Input resistance
Gain
R
i
G
s
G
s
7
57
–7
10
59
13
61
–9
k
dB
dB
Noise at line weighted
psophometrically
Sidetone reduction
DTMF-Amplifier
Input resistance
DTMF Gain
n
o
–70
–68
dBm
G
STA
10
15
20
dB
R
D
G
D
G
D
8
9
–7
10
13
13
–9
k
dB
dB
Volume range d
Receiving amplifier
Input resistance
Gain
5%
V
0
1
V
RMS
see figure 4
Pin 12 - 3
R
HH
= 300
,
I
L
= 30 mA
l =
5 km
R
HH
= 300
adjustable with
R
AGC,
I
L
= 31 mA to 78 mA
l = 5 km to 0 km
I
L
= 78 mA = l = 0 km
S2 = 0
I
L
20 mA
I
L
20 mA
R
i
G
R
50
–3
k
dB
G
R
–1
–5
–6
–5
–7
dB
Receiving noise at earphone
weighted psophometrially
Gain change when muted
Output saturation threshold
MUTE or MUTE-input
MUTE-input current
MUTE off input voltage
MUTE on input voltage
MUTE-input current
MUTE off input voltage
MUTE on input voltage
Supply voltage
n
i
–80
–71
dBm
G
RM
V
0
15
0.8
20
1
24
1.5
dB
V
pp
Pin 9 = 0 V
I
M
20
1.5
50
80
μ
A
V
V
μ
A
V
V
V
Moff
V
M on
I
M
V
M off
V
M on
0.3
30
0.3
Pin 9 = 1.5 V
10
20
1.5
see figure 4
20 mA MUTE or MUTE
switched off
switched on
Pin 10
I
L
20 mA MUTE or MUTE
switched off
switched on
Pin 10
Output voltage
I
L
V+
3
2.5
2.9
6.1
3.1
V
V
Output current
I+
1
30
μ
A
mA
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