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參數(shù)資料
| 型號(hào)： | TZA3033 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 跨阻放大器 |
| 英文描述： | SDH/SONET STM1/OC3 Transimpedance Amplifier(SDH/SONET STM1/OC3互阻抗放大器) |
| 中文描述： | SDH / SONET的STM1/OC3阻放大器（SDH / SONET的STM1/OC3互阻抗放大器） |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | TZA3033 |
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1998 Jul 08
8
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
Notes
1.
All I
n(tot)
measurements were made with an input capacitance of C
i
= 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
PSRR is defined as the ratio of the equivalent current change at the input (
I
IPhoto
) to a change in supply voltage:
I
CC
2.
For example, a disturbance of +4 mV disturbance on V
CC
at 10 MHz will typically add an extra 2 nA to the photodiode
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
I
n(tot)
total integrated RMS
noise current over
bandwidth
referred to input; note 1
f = 90 MHz
f = 120 MHz
f = 150MHz
16
tbf
tbf
1
nA
nA
nA
dB/ms
R
tr
/
t
PSRR
AGC loop constant
power supply rejection
ratio
measured differentially;
note 2
f = 100 kHz to 10 MHz
f = 100 MHz
0.5
10
μ
A/V
μ
A/V
Input: IPhoto
I
i(IPhoto)(p-p)
input current on
pin IPhoto (peak-to-peak
value)
input bias voltage on
pin IPhoto
V
CC
= 5 V
V
CC
= 3.3 V
500
500
+1
+1
+1800
+1600
μ
A
μ
A
V
bias(IPhoto)
1048
mV
Data outputs: OUT and OUTQ
V
O(CM)
common mode output
voltage
single-ended output
voltage (peak-to-peak
value)
differential output offset
voltage
output resistance
rise time
fall time
AC coupled; R
L
= 50
V
CC
1.800 V
CC
1.700 V
CC
1.600 V
V
o(se)(p-p)
AC coupled; R
L
= 50
150
260
mV
V
OO
100
+100
mV
R
o
t
r
t
f
single-ended; DC tested
20% to 80%
80% to 20%
42
50
tbf
tbf
58
ps
ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
-------V
=
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