參數(shù)資料
型號(hào): TZA3023T
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡(luò)
英文描述: SDH/SONET STM4/OC12 transimpedance amplifier
中文描述: SPECIALTY TELECOM CIRCUIT, PDSO8
封裝: 3.90 MM, PLASTIC, SOT-96-1, SO-8
文件頁(yè)數(shù): 18/24頁(yè)
文件大小: 191K
代理商: TZA3023T
2000 Mar 29
18
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
BONDING PAD LOCATIONS
Note
1.
All coordinates are referenced, in
μ
m, to the bottom
left-hand corner of the die.
SYMBOL
PAD
COORDINATES
(1)
x
y
DREF
GND
GND
IPhoto
GND
GND
GND
GND
OUT
OUTQ
V
CC
V
CC
AGC
1
2
3
4
5
6
7
8
9
95
95
95
95
215
360
549
691
785
785
567
424
259
881
618
473
285
95
95
95
95
501
641
1055
1055
1055
10
11
12
13
TZA3023U
1
10
9
2
3
4
5
0
x
y
0
13
12
11
6
7
8
1300
μ
m
1030
μ
m
DREF
IPhoto
GND
GND
OUTQ
OUT
MCD897
G
G
A
V
V
G
G
Fig.22 Bonding pad locations of the TZA3023U.
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
2.1
μ
m PSG (PhosphoSilicate Glass) on top of 0.65
μ
m oxynitride
minimum dimension of exposed metallization is 90
×
90
μ
m (pad size = 100
×
100
μ
m)
1.22
μ
m W/AlCu/TiW
380
μ
m nominal
1.03
×
1.30 mm (1.34 mm
2
)
silicon; electrically connected to GND potential through substrate contacts
<440
°
C; recommended die attach is glue
<15 s
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