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參數(shù)資料
| 型號(hào)： | TZA1000 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | QIC read-write amplifier(QIC讀寫放大器) |
| 中文描述： | 1 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, MS-013AD, SOT137-1, SOP-24 |
| 文件頁(yè)數(shù)： | 15/24頁(yè) |
| 文件大小： | 132K |
| 代理商： | TZA1000 |
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1998 Mar 17
15
Philips Semiconductors
Preliminary specification
QIC read-write amplifier
TZA1000
Z
i
V
I(6,7)
THD
input impedance
DC input voltage; pins 6 and 7
total harmonic distortion
1
1.2
1.84
1.3
4
1.4
40
k
V
dB
at 34 and 40 dB gain
settings; V
o(p-p)
= 1 V
G
v(servo)
V
n(i)(eq)(servo)
servo preamplifier voltage gain WX-WY to output
equivalent input noise voltage:
servo pre-amp
DC input voltage pins 1 and 3
sense current
62
66
1.8
70
2.8
dB
nV/
√
Hz
Z
source
= 0
V
I(1,3))
I
sense
2.4
14.6
2.5
15.2
2.6
15.8
V
mA
R
ref
= 430
; S = 64;
note 3
all conditions; note 4
I
sense(max)
V
VDD3-ISENSE
maximum sense current
voltage difference between
V
DD3
and ISENSE
(pins 9 and 8)
sense DAC resolution
output impedance of sense
current source
FB amplifier voltage gain
3 dB bandwidth of FB
amplifier
3 dB AC coupling of FB
amplifier
bias current amplitude
(peak-to-peak)
33
1.6
13.2
mA
V
RES
DAC(SENSE)
Z
o(sense)
10
7
bits
k
f = 1 kHz;
I
o(sen)
= 16 mA
G
v(FB)
B
(-3dB)
11.5
13
5
14.5
dB
MHz
f
coupling(FBamp)
3
kHz
I
bias
ENFB1 = 0; ENFB0 = 1
10
ENFB1 = 1; ENFB0 = 0 0
ENFB1 = ENFB0 = 1
B = 0; see Table 3
1.8
+10
+9
+20
2.0
mA
mA
mA
V
10
1.6
V
O(23,24)
DC voltage level of FB outputs
(pins 23 and 24)
voltage difference between
BIASA and BIASB
(pins 23 and 24) at maximum
DC bias voltage
bias DAC resolution
read amplifier DC output
voltage (pins 18 and 19)
read amplifier DC offset
voltage (voltage change at
pins 18 and 19)
output voltage (RMS value;
pins 18 and 19)
guaranteed output current
lower AGC detection voltage
level at OUTB
upper AGC detection voltage
level at OUTB
V
BIASA-BIASB
B = 31; see Table 3;
bias load 88
1.4
1.52
1.6
V
RES
DAC(BIAS)
V
O(18,19)
2.4
5
2.5
2.6
bits
V
V
OO(18,19)
100
mV
V
o(rms)(18,19)
0.5
V
I
o
V
O(AGCL)
1.5
2.15
2.2
2.25
mA
V
V
O(AGCH)
2.75
2.8
2.85
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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