參數(shù)資料
型號: TWL6030B1A4CMR
廠商: TEXAS INSTRUMENTS INC
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PBGA187
封裝: 7 X 7 MM, 0.40 MM PITCH, GREEN, FCBGA-187
文件頁數(shù): 47/97頁
文件大?。?/td> 937K
代理商: TWL6030B1A4CMR
SWCS045B
– SEPTEMBER 2010 – REVISED JUNE 2011
POR
– Released when the energy source can supply the digital resources
– POR threshold is the minimum voltage below which the TWL6030 device is reset.
VBATMIN_LO
– Threshold of hardware switch-off
– Two values, depending on the battery technology, are stored in EPROM and selected by boot mode.
– The comparator falling-edge threshold (VBATMIN_LO) is configurable from 2.00 to 3.100 V in 50-mV
steps.
– The equivalent comparator hysteresis range is from 150 to 500 mV.
VBATMIN_HI
– Threshold of switch-on
– Checked as condition to initiate any sequence to ACTIVE state
– Two values, depending on the battery technology, are stored in EPROM and selected by boot mode.
– The comparator rising-edge threshold (VBATMIN_HI) is configurable from 2.50 to 3.55 V in 50-mV steps.
– The equivalent comparator hysteresis range is from 150 to 500 mV.
– For correct system behavior, the VBATMIN_HI threshold value must not be programmed higher than the
default charging voltage. Otherwise, the TWL6030 device does not switch on after a charger plug with
empty battery.
Depending on the battery technology used, the Phoenix power device must be configured appropriately with the
battery chemistry BOOT pin. The corresponding EPROM bits of the main battery comparators thresholds are
loaded during the Phoenix power device start-up sequence:
The comparator rising edge threshold (VBATMIN_HI) is configurable from 2.50 to 3.550 V in 50-mV steps.
The comparator falling edge threshold (VBATMIN_LO) is configurable from 2.00 to 3.100 V in 50-mV steps.
The equivalent comparator hysteresis range is thus from 150 to 500 mV in 50-mV steps.
The EPROM bits stored are:
Rising edge 16-step code for the current battery generation (6 bits)
Rising edge 16-step code for the next battery generation (6 bits)
Falling edge 23-step code for the current battery generation (6 bits)
Falling edge 23-step code for the next battery generation (6 bits)
Table 13 lists the parameters for the rising edge of the VBATMIN_HI threshold.
Table 13. VBATMIN_HI Threshold
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Voltage threshold
<001010>
2.460
2.500
2.580
V
Voltage threshold
<001011>
2.510
2.550
2.630
V
Voltage threshold
<001100>
2.560
2.600
2.680
V
Voltage threshold
<001101>
2.610
2.650
2.730
V
Voltage threshold
<001110>
2.655
2.700
2.785
V
Voltage threshold
<001111>
2.705
2.750
2.835
V
Voltage threshold
<010000>
2.755
2.800
2.885
V
Voltage threshold
<010001>
2.805
2.850
2.940
V
Voltage threshold
<010010>
2.855
2.900
2.990
V
Voltage threshold
<010011>
2.905
2.950
3.040
V
Voltage threshold
<010100>
2.955
3.000
3.090
V
Voltage threshold
<010101>
3.000
3.050
3.145
V
Voltage threshold
<010110>
3.050
3.100
3.195
V
Voltage threshold
<010111>
3.100
3.150
3.245
V
Voltage threshold
<011000>
3.150
3.200
3.300
V
Voltage threshold
<011001>
3.200
3.250
3.350
V
Copyright
2010–2011, Texas Instruments Incorporated
51
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