參數(shù)資料
型號(hào): TVR1G
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-41
封裝: 3-3C1A, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 128K
代理商: TVR1G
TVR1B,TVR1G,TVR1J
2006-11-07
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR1B,TVR1G,TVR1J
TV Applications (fast recovery)
Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C)
Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
Reverse Recovery Time: trr = 2.0 s
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
TVR1B
100
TVR1G
400
Repetitive peak reverse
voltage
TVR1J
VRRM
600
V
Average forward current (Ta
= 65°C)
IF (AV)
0.5
A
Peak one cycle surge forward current
(non repetitive)
IFSM
10 (50 Hz)
A
Junction temperature
Tj
40~125
°C
Storage temperature range
Tstg
40~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 0.5 A
1.2
V
Repetitive peak reverse current
IRRM
VRRM = Rated
10
A
trr (1)
IF = 20 mA, IR = 1 mA
2.0
Reverse recovery time
trr (2)
IF = 100 mA, IR = 100 mA
0.3
s
Marking
Abbreviation Code
Part No.
VR1B
TVR1B
VR1G
TVR1G
VR1J
TVR1J
Unit: mm
JEDEC
JEITA
TOSHIBA
3-3C1A
Weight: 0.3 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
VR 1J
Part No. (or abbreviation code)
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