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參數(shù)資料
| 型號： | TV3006M |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode |
| 中文描述： | 335 A, 600 V, SILICON, RECTIFIER DIODE, DO-9 |
| 封裝： | DO-9, 1 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | TV3006M |
TV30
2/7
SURGE RATINGS
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
=175
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
6.0
kA
115 x 10
6
A
2
s
4.8
kA
180 x 10
3
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
o
C/W
-
0.06
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
-
0.13
o
C/W
175
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-55
200
o
C
-
-
175
o
C
Mounting torque 35.0Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
dc
Mounting Torque
-
30.0
35.0
Nm
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
μ
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
90*
-
A
300*
At V
RRM
, T
case
= 175
o
C
-
20
mA
-
1.4
V
At 1000A peak, T
case
= 25
o
C
Conditions
Typ.
Max.
Units
At T
vj
= 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.6
m
At T
vj
= 175C
-
0.8
V
t
rr
reverse recovery time
6.5*
-
μ
s
I
F
= 200A, dI
RR
/dt = 20A/
μ
s, T
case
= 25C
*Typical values.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TV3006MR | 制造商:Dynex Semiconductor 功能描述:STANDARD RECOVERY DIODE AND RECTIFIER |
| TV3010 | 制造商:Dynex Semiconductor 功能描述:RECTIFIER MODULE - STANDARD RECOVERY |
| TV3010K | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Rectifier Diode |
| TV3010M | 制造商:Dynex Semiconductor 功能描述:RECTIFIER MODULE - STANDARD RECOVERY |
| TV3012KR | 制造商:Dynex Semiconductor 功能描述:STANDARD RECOVERY DIODE AND RECTIFIER |
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