參數(shù)資料
型號(hào)： TTS3816B4E-7
廠商： Electronic Theatre Controls, Inc.
英文描述： 2M x 16Bit x 4 Banks synchronous DRAM
中文描述： 200萬× 16 × 4銀行同步DRAM
文件頁數(shù)： 5/8頁
文件大小： 274K
代理商： TTS3816B4E-7
M
.tec
T
T
S3816B4E
Revision_1.1
5
TwinMOS Technologies Inc.
Sep. 2000
ABSOLUTE MAXIMUM RATING
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on VCC
supply relative to V
SS
VCC, VCC
Q
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
℃
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to
the
recommended operating condition
s
.
Exposure to higher voltage
than recommended
for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VCC, VCC
Q
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
VCC
Q
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
=-2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
=2mA
Input leakage current (Input)
I
IL
-1
-
1
uA
3
Input leakage current (I/O pins)
I
IL
-1.5
-
1.5
uA
3,4
Notes:
1.
V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≦
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≦
3ns.
3. Any input 0V
≦
V
IN
≦
VCC
Q,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. D
out
is disabled, 0V
≦
V
out
≦
VCC
Q
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