參數(shù)資料
型號(hào): TSTS7300
廠商: Vishay Intertechnology,Inc.
英文描述: GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
中文描述: 砷化鎵紅外發(fā)光二極管在密封至18例
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 81K
代理商: TSTS7300
TSTS730.
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81048
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their glass lenses provide a high ra-
diant intensity without external optics.
Features
High radiant intensity
Suitable for pulse operation
Angle of half intensity
=
±
12
Peak wavelength
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
94 8642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Test Conditions
Symbol
V
R
I
F
I
FM
Value
5
250
500
Unit
V
mA
mA
T
case
t
p
/T = 0.5, t
p
T
case
t
p
100 s
25 C
100 s,
25 C
Surge Forward Current
Power Dissipation
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
2.5
170
500
100
A
mW
mW
C
C
K/W
K/W
T
case
25 C
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
–55...+100
450
150
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