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參數(shù)資料
| 型號： | TSR50AA60 |
| 廠商： | Sanrex Corporation |
| 英文描述： | TRIAC (ISOLATED TYPE) TO-240 PACKAGE |
| 中文描述： | 可控硅（獨立型）至240包裝 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 62K |
| 代理商： | TSR50AA60 |
SanRex
TRIAC (ISOLATED TYPE) TO-240 PACKAGE
TSR50AA40/60
I
T(RMS)
=
50A
, V
DRM
=
400/600V
SanRex
Triac
TSR50AA40/60
is designed for full-wave AC
control applications. It can be used as an ON/OFF function or
for phase control operations.
Features
* Glass-passivated junctions Features
* High Surge Current
* UL registered E76102
Typical Applications
* Heater Control
* Motor Control
* Lighting Control
< Maximum Ratings >
(Tj = 25
°
C Unless Otherwise Specified)
Ratings
TSR50AA60
600
650
Symbol
Item
TSR50AA40
400
450
Unit
V
DRM
V
DSM
Repetitive Peak Off-state Voltage
Non-Repetitive Peak Off-state Voltage
V
V
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
G M
di/dt
Tj
T
s t g
V
ISO
Item
Conditions
Ratings
50
730/800
2660
10
1
3
10
50
-40 to +125
-40 to +125
2500
2.7(28)
2.7(28)
170
Unit
A
A
A
2
s
W
W
A
V
A/
F
s
°C
°C
V
R.M.S. On-state Current
Surge On-state Current
I
2
t (for fusing)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Critical Rate of Rise of On-state Current
Operation Junction Temperature
Storage Temperature
Isolation Breakdown Voltage
Mounting M5
Mounting
Torque
Terminals M5
Mass
T
C
= 94°C
One cycle, 50Hz/60Hz, Peak, non-repetitive
Value for one cycle surge current
I
G
=100mA V
D
=1/2V
DRM
di/dt=1A/
F
s
A.C. 1 minute
Recommended Value 1.5 to 2.5 (15 to 25)
Recommended Value1.5 to 2.5 (15 to 25)
Typical Value
N*m
(kg *
cm)
g
< Electrical Characteristics >
(Tj = 25
°
C Unless Otherwise Specified)
Ratings
Min.
Typ.
Symbol
Item
Conditions
Max.
10
1.3
50
50
-
50
3
3
-
3
Unit
I
DRM
V
TM
I
GT
1
+
I
GT
1
-
I
GT
3
+
I
GT
3
-
V
G T
1
+
V
G T
1
-
V
G T
3
+
V
G T
3
-
V
G D
Repetitive Peak Off-state Current
Peak On-State Voltage
QI
QII
QIV
QIII
QI
QII
QIV
QIII
Non-Trigger Gate Voltage
T
j
= 125°C, V
D
= V
DRM
I
T
= 70A
V
D
= 6V, I
T
= 1A
V
D
= 6V, I
T
= 1A
mA
V
mA
mA
mA
mA
V
V
V
V
V
-
-
Gate Trigger Current
V
D
= 6V, I
T
= 1A
V
D
= 6V, I
T
= 1A
V
D
= 6V, I
T
= 1A
-
-
Gate Trigger Voltage
V
D
= 6V, I
T
= 1A
Tj = 125
°
C, V
D
=1/2V
DRM
Tj = 125
°
C, V
D
=2/3V
DRM
, exp. Wave
0.2
dv/dt
Critical Rate of Rise of Off-State Voltage
Critical Rate of Rise of Commutation
Voltage
Holding Current
Thermal Resistance
____________________________________________________________________________________________________________________________________
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516) 625-1313 FAX(516) 625-8845 E-mail: semi@sanrex.com
50
V/
F
s
(dv/dt)c
Tj = 125
°
C, V
D
=2/3V
DRM
(di/dt)c=8A/ms
6
V/
F
s
I
H
50
100
0.55
mA
°C/W
R
th(j-c)
Junction to case
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