參數(shù)資料
型號(hào): TSM4944D
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 30V Dual N-Channel MOSFET
中文描述: 雙30V的N溝道MOSFET
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 187K
代理商: TSM4944D
Preliminary
TSM4944D
30V Dual N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
2/4
Version: Preliminary
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 12.2A
V
GS
= 4.5V, I
D
= 9.4A
V
DS
= 15V, I
D
= 15A
I
S
= 1.9A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
30
1.0
--
--
30
--
--
--
--
--
1.8
--
--
--
11
15.4
32
0.85
--
3.0
±100
1.0
--
13.2
18
--
1.3
V
V
nA
uA
A
Drain-Source On-State Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
g
fs
V
SD
S
V
Q
g
--
26
--
Gate-Source Charge
Q
gs
--
6
--
Gate-Drain Charge
V
DS
= 15V, I
D
= 12.2A,
V
GS
= 10V
Q
gd
C
iss
--
5
--
--
nC
Input Capacitance
--
2134
Output Capacitance
C
oss
--
343
--
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
134
--
pF
t
d(on)
--
17
--
Turn-On Rise Time
t
r
--
3.5
--
Turn-Off Delay Time
t
d(off)
--
40
--
Turn-Off Fall Time
Notes:
a. pulse test: PW
300
μ
S, duty cycle
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
V
DD
= 15V, R
L
= 15
Ω
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 6
Ω
t
f
--
6
--
nS
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