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參數(shù)資料
| 型號： | TSM4886CSRL |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 30V N-Channel MOSFET |
| 中文描述： | 30V的N溝道MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 165K |
| 代理商： | TSM4886CSRL |
Preliminary
TSM4886
30V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
2/4
Version: Preliminary
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= ±20V, V
DS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
≥
5V, V
GS
= 10V
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
= 11A
V
DS
= 15V, I
D
= 13A
I
S
= 2.6A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
30
1
--
--
40
--
--
--
--
--
1.8
--
--
--
7.8
10.5
38
0.85
--
3
V
V
nA
μ
A
A
±100
1.0
--
10
13.5
--
1.3
Drain-Source On-State Resistance
a
R
DS(ON)
m
Ω
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
g
fs
V
SD
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
26
6
5
2134
343
134
--
--
--
--
--
--
V
DS
= 15V, I
D
= 13A,
V
GS
= 5V
nC
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
17
3.5
40
6
--
--
--
--
V
DD
= 15V, R
L
= 1.0
Ω
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 3
Ω
nS
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