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參數(shù)資料
| 型號： | TSM4420CS |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 144K |
| 代理商： | TSM4420CS |
TSM4420
2-3
2005/08 rev. B
Electrical Characteristics
T
J
= 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
25
--
--
V
V
GS
= 4.5V, I
D
= 11A
R
DS(ON)
--
9
11
m
Ω
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 13.5A
R
DS(ON)
--
7
8.5
m
Ω
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
1.0
--
3.0
V
Zero Gate Voltage Drain Current
V
DS
= 24V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 20V, V
DS
= 0V
I
GSS
--
--
±100
nA
Forward Transconductance
V
DS
=10V, I
D
= 35A
g
fs
--
50
--
S
Dynamic
Total Gate Charge
Q
g
--
--
25
Gate-Source Charge
Q
gs
--
6.6
--
Gate-Drain Charge
V
DS
= 15V, I
D
= 13.5A,
V
GS
= 5V
Q
gd
--
4.0
--
nC
Turn-On Delay Time
t
d(on)
--
15
25
Turn-On Rise Time
t
r
--
11
18
Turn-Off Delay Time
t
d(off)
--
40
60
Turn-Off Fall Time
V
DD
= 15V, R
L
= 15
Ω
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 24
Ω
t
f
--
12
20
nS
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
50
A
Diode Forward Voltage
I
S
= 20A, V
GS
= 0V
V
SD
--
0.75
1.1
V
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM4424 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET |
| TSM4425 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
| TSM4425CS | 功能描述:MOSFET 30V N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM4425CSRL | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
| TSM4426 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V Dual N-Channel MOSFET |
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