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參數(shù)資料
| 型號(hào)： | TSM3400CX |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 30V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 30V的N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 207K |
| 代理商： | TSM3400CX |
TSM3400
2-5
2005/05 rev. A
Electrical Characteristics
Ta = 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= - 250uA
BV
DSS
30
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 3.5A
R
DS(ON)
--
40
50
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 2A
R
DS(ON)
--
55
70
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= - 250uA
V
GS(TH)
1
1.7
2.5
V
Zero Gate Voltage Drain Current
V
DS
= 24V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ±20V, V
DS
= 0V
I
GSS
--
--
±100
nA
On-State Drain Current
V
DS
=5V, V
GS
= 10V
I
D(ON)
10
--
--
A
Forward Transconductance
V
DS
= 5V, I
D
= 3.5A
g
fs
--
6
--
S
Dynamic
Total Gate Charge
Q
g
--
6.8
--
Gate-Source Charge
Q
gs
--
3.1
--
Gate-Drain Charge
V
DS
=10V, I
D
= 3.5A, V
GS
= 4.5V
Q
gd
--
1.95
--
nC
Turn-On Delay Time
t
d(on)
--
14.2
--
Turn-On Rise Time
t
r
--
4.8
--
Turn-Off Delay Time
t
d(off)
--
19.6
--
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10
,
I
D
= 1A, V
GEN
= 10V, R
G
= 6
t
f
--
9.3
--
nS
Input Capacitance
C
iss
--
600
--
Output Capacitance
C
oss
--
125
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
95
--
pF
Source-Drain Diode
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= - 1.6A, V
GS
= 0V
V
SD
--
- 0.8
- 1.2
V
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