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參數(shù)資料
| 型號： | TSM2N7002 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 60V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 60V的N溝道增強型MOS管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 200K |
| 代理商： | TSM2N7002 |
TSM2N7002ED
2-5
2004/12 rev. B
Electrical Characteristics (Single Channel)
Tj = 25
o
C unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 10uA
BV
DSS
50
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 250mA
R
DS(ON)
--
--
3
Drain-Source On-State Resistance
V
GS
= 5V, I
D
= 50mA
R
DS(ON)
--
--
4
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
1.0
2.0
2.5
V
Zero Gate Voltage Drain Current
V
DS
= 50V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 20V, V
DS
= 0V
I
GSS
--
--
± 100
nA
On-State Drain Current
V
DS
≧
7V, V
GS
= 10V
I
D(ON)
500
--
--
mA
Forward Transconductance
V
DS
= 7V, I
D
= 200mA
g
fs
80
--
--
mS
Dynamic *
Turn-On Delay Time
T
D(ON)
--
7.5
20
Turn-On Rise Time
t
r
--
6
--
Turn-Off Delay Time
T
D(OFF)
--
7.5
20
Turn-Off Fall Time
V
DD
= 30V,
I
D
= 100mA, V
GEN
= 10V,
R
G
= 10
t
f
--
3
--
nS
Input Capacitance
C
iss
--
19
50
Output Capacitance
C
oss
--
10
25
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
3
5
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
115
mA
Diode Forward Voltage
I
S
= 115mA, V
GS
= 0V
V
SD
--
0.76
1.5
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
* Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM2N7002CX | 功能描述:MOSFET 60V 0.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7002CX RF | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
| TSM2N7002ECU | 功能描述:MOSFET 60V 0.25A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7002ECU RF | 制造商:SKMI/Taiwan 功能描述:SOT-323;60V 0.2AMP N CHANEL MO |
| TSM2N7002ECU6 | 功能描述:MOSFET 60V 0.25A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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