參數(shù)資料
型號: TSM2N7000CT
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 60V N-Channel MOSFET
中文描述: 60V的N溝道MOSFET
文件頁數(shù): 2/4頁
文件大小: 159K
代理商: TSM2N7000CT
TSM2N7000
60V N-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter
2/4
Version: A07
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
V
GS
= 0V, I
D
= 10
μ
A
V
DS
= V
GS
, I
D
= 1mA
V
GS
= ±15V, V
DS
= 0V
V
DS
= 48V, V
GS
= 0V
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
V
DS
= 15V, I
D
= 300mA
I
S
= 200mA, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
60
0.8
--
--
--
--
--
--
--
--
--
--
--
7.5
320
1.3
--
3.0
±10
1.0
5.0
--
--
1.5
V
V
nA
μ
A
Drain-Source On-State Resistance
R
DS(ON)
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
g
fs
V
SD
mS
V
C
iss
C
oss
C
rss
--
--
--
60
25
5
--
--
--
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
Turn-On Rise Time
t
r
--
10
--
Turn-Off Fall Time
V
DD
= 15V, R
L
= 30
Ω
,
I
D
= 500mA,
V
GEN
= 10V, R
G
= 25
Ω
t
f
--
10
--
nS
Notes:
a. pulse test: PW
300
μ
S, duty cycle
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
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