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參數(shù)資料
| 型號： | TSM2302 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 20V的N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | TSM2302 |
TSM2302
2-2
2003/12 rev. C
Electrical Characteristics
Rate I
D
= 2.4A, (Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
20
--
--
V
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 3.6A
R
DS(ON)
--
50
65
Drain-Source On-State Resistance
V
GS
= 2.5V, I
D
= 3.1A
R
DS(ON)
--
75
95
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.45
--
--
V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 8V, V
DS
= 0V
I
GSS
--
--
± 100
nA
On-State Drain Current
V
DS
≧
5V, V
GS
= 4.5V
I
D(ON)
6
--
--
A
Forward Transconductance
V
DS
= 5V, I
D
= 3.6A
g
fs
--
10
--
S
Dynamic
Total Gate Charge
Q
g
--
5.2
10
Gate-Source Charge
Q
gs
--
0.65
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 3.6A,
V
GS
= 4.5V
Q
gd
--
1.5
--
nC
Turn-On Delay Time
t
d(on)
--
7
15
Turn-On Rise Time
t
r
--
55
80
Turn-Off Delay Time
t
d(off)
--
16
60
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
10
25
nS
Input Capacitance
C
iss
--
450
--
Output Capacitance
C
oss
--
70
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
43
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.6
A
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= 1.0A, V
GS
= 0V
V
SD
--
0.75
1.2
V
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PDF描述 |
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| TSM2302CX | 20V N-Channel Enhancement Mode MOSFET |
| TSM2311CX | 20V P-Channel Enhancement Mode MOSFET |
| TSM2311 | 20V P-Channel MOSFET |
| TSM2311_07 | 20V P-Channel MOSFET |
| TSM2312CX | 20V N-Channel Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM2302_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V N-Channel MOSFET |
| TSM2302CX | 功能描述:MOSFET 20V N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2302CX RF | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R 制造商:Taiwan Semiconductor 功能描述:Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-23 T/R |
| TSM2302CXRF | 制造商:Taiwan Semiconductor 功能描述:MOSFET N-Channel 20V 2.8A SOT23 |
| TSM2303 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
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