參數(shù)資料
型號: TSM12N02CP
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強(qiáng)型MOS管
文件頁數(shù): 1/3頁
文件大?。?/td> 149K
代理商: TSM12N02CP
TSM12N02
1-3
2006/05 rev. A
TSM12N02
N-Channel Enhancement Mode MOSFET
V
DS
= 20V
I
D
= 12A
R
DS (on)
, Vgs @ 10V, Ids@8A = 30m
Ω
R
DS (on)
, Vgs @ 4.5V, Ids@6A = 40m
Ω
Features
Advanced trench process technology
Low gate charge
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
High performance technology for low R
DS(ON)
Fast switching speed
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM12N02CP
Tape & Reel
TO-252
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current
I
D
12
Pulsed Drain Current
I
DM
30
A
T
A
= 25
o
C
1.3
W
Maximum Power Dissipation
T
A
= 100
o
C
P
D
2
W/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
Thermal Performance
T
J
, T
STG
-55 to +150
o
C
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
10
S
Junction-to-case Thermal Resistance
R
θ
jc
2.2
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in
2oz Cu PCB board
R
θ
ja
50
o
C/W
Pin assignment:
1. Gate
2. Drain
3. Source
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