TSM108
3/13
ELECTRICAL CHARACTERISTICS
T
amb
= 25°C, V
CC
= 12V (unless otherwise specified)
Symbol
CURRENT CONSUMPTION
I
CC
Current Consumption
STANDBY
I
stby
Current Consumption in Standby Mode
V
sh
Input Standby Voltage High Impedance
Parameter
Test Condition
Min.
Typ.
Max.
Unit
4
7
mA
150
μ
A
V
Internal Pull up resistor.
Stby pin should be left
open
2
V
sl
Input Standby Voltage Low
OSCILLATOR
F
OSC
Frequency of the Oscillator
VOLTAGE CONTROL
1)
2)
V
ref
Voltage Control Reference
0.8
V
C
OSC
= 220pF
70
100
130
kHz
1. V
ref
parameter indicates global precision of the voltage control loop.
2. Control Gain : A
= 95dB ; Input Resistance : R
= infinite ; Output Resistance : R
= 700M
; Output Source/Sink Current :
I
so
, I
si
= 150
μ
A ; Recommended values for the compensation network are : 22nF & 22k
in series between output and ground.
3. V
sense
parameter indicated global precision of the current control loop.
4. Control Gain : A
= 105dB ; Input Resistance : R
=380k
; Output Resistance : R
= 105M
; Output Source/Sink Current :
I
so
, I
si
= 150
μ
A ; Recommended values for the compensation network are : 22nF & 22k
in series between output and ground.
5. A current foldback function is implemented thanks to a systematic -6mV negative offset on the current amplifier inputs which
protects the battery from over charging current under low battery voltage conditions, or output short circuit conditions.
6. The Gate Drive output stage has been optimized for PMosfets with input capacitance equal to Cload. A bigger Mosfet (with input
capacitance higher than Cload) can be used with TSM108, but the gate drive performances will be reduced (in particular when
reaching the Dmax. PWM mode).
7. The given limits comprise the hysteresis (UV
hyst
).
8. It is possible to modify the UVLO and OVLO limits by adding a resistor (to ground or to V
CC
) on the pins UV and OV.
The internal values of the resistor should be taken into account
T
amb
= 25°C
-25°C < T
amb
< 85°C
2.450
2.520
2.590
V
CURRENT CONTROL
3)
4)
5)
V
sense
Current Control Reference Voltage
T
amb
= 25°C
-25°C < T
amb
< 85°C
196
191
206
216
221
mV
GATE DRIVE - P CHANNEL MOSFET DRIVE
I
sink
Sink Current - Switch ON
T
amb
= 25°C
-25°C < T
amb
< 85°C
T
amb
= 25°C
-25°C < T
amb
< 85°C
15
40
mA
I
source
Source Current - Switch OFF
30
80
mA
C
load
Input Capacitance of the PMOSFET
6)
1
1.5
nF
PWM
max.
UVLO
UV
Maximum Duty Cycle of the PWM function
95
100
%
Under Voltage Lock Out
7)
UVLO Voltage Hysteresis - low to high
Upper Resistor of UVLO bridge
8)
Lower Resistor of UVLO bridge (see note 8)
-25°C < T
amb
< 85°C
8
9
V
UV
hyst
R
uvu
R
uvl
OVLO
OV
OV
hyst
R
ovu
R
ovl
200
184
mV
k
k
T
amb
= 25°C
T
amb
= 25°C
76.5
Over Voltage Lock Out (see note 7)
OVLO Voltage Hysteresis - low to high
Upper Resistor of OVLO bridge (see note 8)
Lower Resistor of OVLO bridge (see note 8)
-25°C < T
amb
< 85°C
32
35
V
400
275
23.2
mV
k
k
T
amb
= 25°C
T
amb
= 25°C