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| 型號(hào)： | TSL265 |
| 英文描述： | Optoelectronic |
| 中文描述： | 光電 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | TSL265 |
TSL265
HIGHSENSITIVITY NEARINFRARED
LIGHTTOVOLTAGE CONVERTER
TAOS016 – SEPTEMBER 1999
2
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
Output current, I
O
Duration of short-circuit current at (or below) 25
°
C
Operating free-air temperature range, T
A
Storage temperature range, T
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10 mA
5 s
–25
°
C to 85
°
C
–25
°
C to 85
°
C
240
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
MAX
UNIT
Supply voltage, V
DD
Operating free-air temperature, T
A
2.7
6
V
°
C
0
70
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p = 880 nm, R
L
= 10 k
(unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
D
Dark voltage
E
e
= 0
V
DD
= 4.5 V,
V
DD
= 4.5 V,
E
e
= 156 mW/cm
2
T
A
= 0
°
C to 70
°
C,
100
mV
V
OM
Maximum output voltage swing
,R
L
= 0,
R
L
= 10 k
4.49
V
4
4.2
V
O
α
vo
N
e
Output voltage
1.6
2
2.4
V
Temperature coefficient of output voltage (V
O
)
Irradiance responsivity
See Note 2
TBD
%/
°
C
12.8
V/(
μ
W/cm
2
)
dB
Power supply rejection
f
ac
= 100 Hz,
f
ac
= 1 kHz,
1.3 V
O(pp)
1.3 V
O(pp)
32
19
dB
I
DD
NOTES:
Supply current
2. The input irradiance E
e
is supplied by a GaAlAs infrared-emitting diode with
λ
p
= 880 nm.
3. Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V.
2.5
4.5
mA
Switching Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p
= 880 nm, R
L
= 10 k
(unless otherwise noted)
(see Note 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
μ
s
μ
s
μ
s
mV RMS
t
r
t
f
t
s
Output pulse rise time
See Notes 4 and 5
166
250
Output pulse fall time
See Notes 4 and 5
163
250
Output settling time
322
Integrated noise voltage
f = dc to 1 kHz
f = 10 Hz,
3.5
92
See Note 6
V
Output noise voltage, rms
f = 100 Hz
86
V/
Hz RMS
μ
√
n
g ,
f = 1 Hz
104
NOTES:
3. Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V.
4. Measured with R
L
= 10 k
between output and ground.
5. The output waveform is monitored on an oscilloscope with Z
i
= 1 M
, C
i
< 20 pF.
6. Measured with external 1-kHz RC filter (10 k
/15.9 nF)
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