參數(shù)資料
型號(hào)： TSL2550D
廠商： TAOS Inc.
英文描述： AMBIENT LIGHT SENSOR WITH SMBus INTERFACE
中文描述： 常溫與SMBus接口光傳感器
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 280K
代理商： TSL2550D
TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L
OCTOBER 2007
3
The
LUMENOLOGY
Company
Copyright 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
0.01
MAX
UNIT
V
OL
SMBus output low voltage
I
O
= 50
μ
A
I
O
= 4 mA
Active, VSMBCLK and VSMDATA = V
DD,
V
DD
= 3.3 V
±
5%
Power down, VSMBCLK and VSMDATA =
V
DD,
V
DD
= 3.3 V
±
5%
VI = V
DD
VI = 0
V
0.4
I
DD
Supply current
0.35
0.6
mA
10
μ
A
I
IH
I
IL
High level input current
Low level input current
5
μ
A
μ
A
5
Operating Characteristics, V
DD
= 3.3 V, T
A
= 25 C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER
TEST CONDITIONS
CHANNEL
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
MIN
TYP
MAX
UNIT
E 0
= 0
1
1
ADC count value standard mode
ADC count value, standard mode
λ
p
= 640 nm
E
e
= 72
μ
W/cm
2
639
799
85
799
703
959
counts
λ
p
= 940 nm
E
e
= 140
μ
W/cm
2
511
1039
E 0
= 0
1
1
ADC count value extended mode
ADC count value, extended mode
λ
p
= 640 nm
E
e
= 72
μ
W/cm
2
155
16
155
139
counts
λ
p
= 940 nm
E
e
= 140
μ
W/cm
2
λ
p
= 640 nm, E
e
= 72
μ
W/cm
2
λ
p
= 940 nm, E
e
= 140
μ
W/cm
2
ADC count value ratio: Ch1/Ch0,
standard mode
0.070
0.70
0.106
0.88
11.1
1.2
5.7
0.175
1.20
λ
p
= 640 nm
E
e
= 72
μ
W/cm
2
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
R
e
Irradiance responsivity standard mode
Irradiance responsivity, standard mode
counts/
(
μ
W/
cm
2
)
λ
p
= 940 nm
E
e
= 140
μ
W/cm
2
5
Fluorescent light source: 300 Lux
2.8
0.23
19
13
R
v
Illuminance responsivity standard mode
Illuminance responsivity, standard mode
counts/
lux
Incandescent light source: 50 Lux
(Sensor Lux) / (actual Lux), standard mode
(Note 5)
Fluorescent light source: 300 Lux
Incandescent light source: 50 Lux
0.65
0.5
1
1
1.35
1.5
NOTES:
3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance E
e
is supplied by an Al
I
nGaP light-emitting diode with the following characteristics: peak wavelength
λ
p = 640 nm and spectral halfwidth
Δλ
= 17 nm.
5. The 940 nm irradiance E
e
is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λ
p = 940 nm and spectral halfwidth
Δλ
= 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.
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