參數(shù)資料
型號(hào): TSKS5412X01
英文描述: GaAs Infrared Emitting Diode in Side View Package
中文描述: 砷化鎵紅外發(fā)光二極管在側(cè)包
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 90K
代理商: TSKS5412X01
TSKS5412X01
Rev. A6, 15-Oct-98
2 (7)
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
I
F
= 100 mA, t
p
I
R
= 10 A
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 50 mA, t
p
I
F
= 50 mA, t
p
I
F
= 50 mA
Symbol
V
F
V
VR
C
j
I
e
Min
Typ
1.3
Max
1.7
Unit
V
V
pF
mW/sr
mW
%/K
deg
nm
nm
ns
ns
Forward Voltage
Reverse Voltage
Junction Capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise time
Fall Time
20 ms
6
50
20 ms
20 ms
2.3
7
e
5
–1
±
30
950
50
400
450
TK
e
I
F
= 50 mA
I
F
= 50 mA
I
F
=1A, t
p
/T=0.01, t
p
I
F
=1A, t
p
/T=0.01, t
p
p
10 s
10 s
t
r
t
f
Additional Test
100% inspection of body with infrared camera.
test criteria: no cracks allowed
TSKS5412X01 / TEKS5412X01 matched (for Reference only)
Parameters
Test Conditions
V
S1
= 5 V
V
S1
= 5 V
I
OL
= 16 mA, I
F
> I
FT
V
S1
= 5 V
I
F
= 3 x I
FT
, R
L
= 1 k
V
S1
= V
S2
= 5 V
Symbol
I
FT
I
Foff
/I
Fon
Min.
Typ.
1.5
80
0.2
Max.
Unit
mA
%
V
Input threshold current
Hysteresis
Output voltage
0.4
Switching frequency
f
sw
200
KHz
Remark: Parameter tested with test fixture provided by Kostal (LENKWINKELSENSOR)
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