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參數(shù)資料
| 型號： | TSHG8200 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 830nm 2-Pin T-1 3/4 |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 830nm 10 Deg |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 105K |
| 代理商： | TSHG8200 |
TSHG8200
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
2
Document Number: 84755
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
80
90
100
21142
T
am
b
- Am
b
ient Temperat
u
re (°C)
P
V
w
e
W
)
R
thJA
= 230 K/
W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
am
b
- Am
b
ient Temperat
u
re (°C)
21143
I
F
w
a
u
r
R
thJA
= 230 K/
W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
e
TK
e
p
TK
p
t
r
t
f
f
c
d
MIN.
TYP.
1.5
2.3
- 1.8
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Forward voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Temperature coefficient of V
F
Reverse current
Junction capacitance
10
125
180
1600
50
- 0.35
± 10
830
40
0.25
20
13
18
3.7
Radiant intensity
120
360
Radiant power
Temperature coefficient of
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Cut-off frequency
V
irtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG8200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| TSHG8200-ASZ | 制造商:Vishay Semiconductors 功能描述:IR EMITTER DH 830NM 5MM 10 DEG-E2, AMMO PACKAGE ENDING - Ammo Pack |
| TSHG8400 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 50mW 830nm 22 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG8400_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| TSHG8400-ASZ | 制造商:Vishay Semiconductors 功能描述:IRED, HIGH POWER, +/- 22?, 830NM, 5MM - Bulk |
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