參數(shù)資料
型號: TSHA6503
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: LED IrLED 875nm 2-Pin T-1 3/4
中文描述: Infrared Emitters 5V 25mW 875nm 24 deg
文件頁數(shù): 1/5頁
文件大小: 105K
代理商: TSHA6503
TSHA6500
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 24-Aug-11
1
Document Number: 81022
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA6500 is an infrared, 875 nm emitting diode in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength:
p
= 875 nm
High reliability
Angle of half intensity:
= ± 24°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 200/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared remote control and free air data transmission
systems with comfortable radiation angle
This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
TSHA6500
I
e
(mW/sr)
30
(deg)
± 24
P
(nm)
875
tr (ns)
600
ORDERING INFORMATION
ORDERING CODE
TSHA6500
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
2.5
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
t
5 s, 2 mm from case
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