- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385019 > TSFF5210 (Vishay Intertechnology,Inc.) High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PDF資料下載
參數(shù)資料
| 型號： | TSFF5210 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| 中文描述： | 高速紅外發(fā)光二極管，870納米，雙異質(zhì)的GaAIAs |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 119K |
| 代理商： | TSFF5210 |
TSFF5210
Vishay Semiconductors
Document Number 81090
Rev. 1.5, 28-Nov-06
www.vishay.com
1
94
8
390
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
Description
TSFF5210 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
DH technology combines high speed with high radiant
power at wavelength of 870 nm.
Features
High modulation bandwidth (23 MHz)
Extra high radiant power and radiant
intensity
Low forward voltage
Suitable for high pulse current operation
Standard T-1 (
5 mm) package
Angle of half intensity
= ± 10°
Peak wavelength
λ
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared video data transmission between Cam-
corder and TV set.
Free air data transmission systems with high
modulation frequencies or high data transmission
rate requirements.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
e2
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward current
100
mA
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
200
mA
Surge forward current
1
A
Power dissipation
250
mW
Junction temperature
100
°C
Operating temperature range
- 40 to + 85
°C
Storage temperature range
- 40 to + 100
°C
Soldering temperature
t
≤
5 sec, 2 mm from case
260
°C
Thermal resistance junction/
ambient
300
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSFF5400 | High Speed IR Emitting Diode in ? mm (T-13/4) Package |
| TSHA620 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6200 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6201 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6202 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSFF5210_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| TSFF5210_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSFF5210CS12 | 制造商:Vishay Semiconductors 功能描述: |
| TSFF5210-CS12 | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER DH 870NM 10DEG 5 制造商:Vishay Intertechnologies 功能描述:IR EMITTER, DH 870NM, 10DEG, 5MM, 制造商:Vishay Intertechnologies 功能描述:IR EMITTER, DH 870NM, 10DEG, 5MM,; Peak Wavelength:870nm; Forward Current If(AV):100mA; Rise Time:15ns; Fall Time tf:15ns; Radiant Intensity:180mW/Sr; Viewing Angle:20; Operating Temperature Min:-40C; Operating Temperature ;RoHS Compliant: Yes |
| TSFF5400 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed IR Emitting Diode in ? mm (T-13/4) Package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。