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| 型號： | TSDF02830Y |
| 英文描述： | Analog Miscellaneous |
| 中文描述： | 模擬雜項 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 175K |
| 代理商： | TSDF02830Y |
VISHAY
TSDF02830Y
Vishay Semiconductors
Document Number 85108
Rev. 1, 23-Oct-02
www.vishay.com
3
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Drain - source breakdown voltage
I
D
= 10 μA, V
G1S
= V
G2S
= 0
Gate 1 - source breakdown voltage + I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2 - source breakdown voltage
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Gate 1 - source leakage current
+ V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 - source leakage current
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain - source operating current
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
Gate 1 - source cut-off voltage
V
DS
= 5 V, V
G2S
= 4, I
D
= 20 μA
Gate 2 - source cut-off voltage
V
DS
= V
RG1
= 5 V, R
G1
=100 k
, I
D
= 20 μA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Amplifier 1
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
, I
D
= I
DSO,
f = 1 MHz, T
amb
= 25 °C, unless otherwise specified
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications
Parameter
Test condition
Forward transadmittance
Gate 1 - source leakage current
+ V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
V
DS
= 5 V, V
G2S
= 4, I
D
= 20 μA
V
DS
= V
RG1
= 5 V, R
G1
= 56 k
, I
D
= 20 μA
+ I
G1SS
±
I
G2SS
I
DSO
20
nA
Gate 2 - source leakage current
20
nA
Drain - source operating current
8
12
17
mA
Gate 1 - source cut-off voltage
V
G1S(OFF)
V
G2S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
0.3
1.2
V
Symbol
V
(BR)DSS
+ V
(BR)G1SS
±
V
(BR)G2SS
+ I
G1SS
±
I
G2SS
I
DSO
Min
12
Typ.
Max
Unit
V
7
10
V
7
10
V
20
nA
20
nA
8
12
17
mA
V
G1S(OFF)
V
G2S(OFF)
0.3
1.0
V
0.3
1.2
V
Symbol
|y
21s
|
C
issg1
C
rss
C
oss
G
ps
Min
23
Typ.
28
Max
33
Unit
mS
Gate 1 input capacitance
2.5
3.0
pF
Feedback capacitance
20
fF
Output capacitance
0.9
pF
Power gain
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 0.5
mS, B
L
= B
Lopt
, f = 200 MHz
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 1 mS,
B
L
= B
Lopt
, f = 400 MHz
G
S
= 3.3 mS, B
S
= B
Sopt
, G
L
= 1
mS, B
L
= B
Lopt
, f = 800 MHz
V
DS
= 5 V, V
G2S
= 0.5 to 4 V, f = 200
MHz
G
S
= G
L
= 20 mS, B
S
= B
L
= 0, f =
50 MHz
G
S
= 2 mS, G
L
= 1 mS, B
S
= B
Sopt
,
f = 400 MHz
G
S
= 3.3 mS, G
L
= 1 mS, B
S
=
B
Sopt
, f = 800 MHz
32
dB
G
ps
28
dB
G
ps
22
dB
AGC range
G
ps
50
dB
Noise figure
F
4.5
6.0
dB
F
1.0
1.6
dB
F
1.5
2.3
dB
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
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