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參數(shù)資料
| 型號： | TSD882S |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Low Vce(sat) NPN Transistor |
| 中文描述： | 低Vce（sat）NPN晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | TSD882S |
TSD882S
1-3
2003/12 rev. A
TSD882S
Low Vce(sat) NPN Transistor
BV
CEO
= 50V
Ic = 3A
V
CE (SAT)
, = 0.3V(typ.) @Ic / Ib = 2A / 20mA
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Structure
Epitaxial planar type.
Complimentary to TSB772S
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TSD882SCT
Bulk Pack
TO-92
TSD882SCY
Tape & Reel
SOT-89
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
50V
50V
5
3
7 (note 1)
0.75
0.50
+150
- 55 to +150
Unit
V
V
V
A
DC
Pulse
TO-92
SOT-89
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%
Electrical Characteristics
T
J
T
STG
o
C
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 2.0A / 0.2A
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 10V, f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
50
50
5
--
--
--
160
--
--
--
--
--
--
0.3
--
90
--
--
--
1
0.5
500
--
V
V
V
uA
uA
V
MHz
Output Capacitance
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Cob
45
--
pF
Pin assignment:
TO-92
1. Emitter
2. Collector
3. Base
SOT-89
1. Base
2. Collector
3. Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSD882S_07 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Vcesat NPN Transistor |
| TSD882SCT | 功能描述:兩極晶體管 - BJT NPN Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TSD882SCT A3 | 制造商:SKMI/Taiwan 功能描述:LOW VCESAT NPN TRANSISTOR |
| TSD882SCY | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Low Vcesat NPN Transistor |
| TSD-887 | 制造商:PMI 制造商全稱:PMI 功能描述:SWITCH MODE DC/DC POWER CONVERSION TRANSFORMERS |
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