
TSD1664
Low Vcesat NPN Transistor
1/5
Version: A07
SOT-89
SOT-223
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
32V
40V
1A
0.15V @ I
C
/ I
B
= 500mA / 50mA
Features
●
●
Low V
CE(SAT)
0.15V @ I
C
/ I
B
= 500mA / 50mA (Typ.)
Complementary part with TSB1132
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Ordering Information
Part No.
TSD1664CY RM
TSD1664CW RP
Package
TO-92
TO-223
Packing
1Kpcs / 7” Reel
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
40
32
5
1
2 (note1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty
≤
50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
Min
40
32
5
--
--
--
82
Typ
--
--
--
--
--
0.15
--
Max
--
--
--
0.5
0.5
0.4
390
Unit
V
V
V
uA
uA
V
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 500mA / 50mA
V
CE
= 3V, I
C
= 100mA
V
CE
=5V, I
C
=-50mA,
f=100MHz
V
CB
= 10V, I
E
= 0, f=1MHz
Transition Frequency
f
T
50
150
--
MHz
Output Capacitance
Cob
--
10
20
pF
h
FE
values are classified as follows:
Rank
P
h
FE
82~180
Q
R
120~270
180~390
Pin Definition:
1. Base
2. Collector
3. Emitter