參數(shù)資料
型號(hào): TSC83251G2D-24IB
廠商: Atmel Corp.
英文描述: B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES
中文描述: B/16-BIT微控制器串行通信接口
文件頁(yè)數(shù): 15/28頁(yè)
文件大?。?/td> 153K
代理商: TSC83251G2D-24IB
Qualpack TSC87251G2D
Rev. 0 – October 1999
15
3.3.1.2 Electromigration
Characterization
Stresses of electromigration are achieved for 1000 hours on 32 packaged metal line running on flat with
a current density of 2x106 A/cm2 at a temperature of 200°C. Lines are declared to be failed for a shift of
the initial resistance by 20%. Results are summarized in the table below.
Level
Metal1
Metal2
Metal3
W/L/T(1)
2/2000/0.50
2/2000/0.50
2/2000/0.70
Structure
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Failures
No
No
No
(1)W/L/T=Width/Length/Thickness of the metal line in microns
Lifetime projection
The objective of reliability is to reach less than 10FIT on metal line within 10 years at a temperature of
150°C. As no failures have been found at 1000 hours in the above stress conditions a lifetime projection
in FIT is meaningless.
However, assuming for AlCu metalization an activation energy in temperature Ea of 0.60eV and an
activation in current with a power-law coefficient n of 2, the current density which guarantees no failures
within 10 years at 150°C can be extrapolated.
With these assumptions the projected current density for no failures at 150°C within 10 years is
calculated as 5x105A/cm2 which is much higher than the current density of 2x105A/cm2 specified in the
design rules.
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