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參數(shù)資料
| 型號： | TSC2059CXG |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | General Purpose NPN Transistor |
| 中文描述： | 通用NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | TSC2059CXG |
TSC2059
1-1
2004/06 rev. A
TSC2059
General Purpose NPN Transistor
BV
CEO
= 40V
Ic = 50mA
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
High transition frequency
Very low capacitance
Small rbb’-Cc and high gain
Small NF.
Ordering Information
Part No.
Packing
Package
Marking
TSC2059CX
3kpcs / Reel SOT-23
3E
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
18V
V
Collector-Emitter Voltage
25V
V
Emitter-Base Voltage
3
V
Collector Current
50
mA
Collector Power Dissipation
225
mW
Operating Junction Temperature
+150
o
C
Operating Junction and Storage Temperature Range
Electrical Characteristics
- 55 to +150
o
C
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
/ I
B
= 20mA / 4mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA,
f=200MHz
V
CB
= 10V, f=1MHz
V
CB
= 10V, I
C
= 10mA,
f=31.8MHz
V
CE
= 12V, I
C
= 2mA,
f=200MHz, Rg=50ohm
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
h
FE
f
T
25
18
3
--
--
--
52
--
--
--
--
--
--
--
--
--
--
--
0.5
0.5
0.5
270
--
V
V
V
uA
uA
V
MHz
1000
Output Capacitance
Cob
Rbb’-Cc
--
--
1.4
8
2.0
15
pF
pF
NF
--
5.5
--
dB
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
K
Range
52 - 120
P
Q
82 - 180
120 - 270
Pin assignment:
1. Base
2. Emitter
3. Collector
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