參數資料
型號: TSAL4400
廠商: Vishay Intertechnology,Inc.
英文描述: GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
中文描述: 砷化鎵/紅外發(fā)光二極管的GaAIAs呢?3毫米(T.1)包裝
文件頁數: 1/5頁
文件大?。?/td> 81K
代理商: TSAL4400
TSAL4400
Vishay Telefunken
1 (5)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81006
GaAs/GaAlAs IR Emitting Diode in 3 mm (T–1)
Package
Description
TSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 % ra-
diant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
Extra high radiant power
Low forward voltage
Suitable for high pulse current operation
Standard T–1 ( 3 mm) package
Angle of half intensity
=
±
25
Peak wavelength
p
= 940 nm
High reliability
Good spectral matching to Si photodetectors
94 8488
Applications
Infrared remote control units
Free air transmission systems
Infrared source for optical counters and card readers
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
t
p
/T = 0.5, t
p
= 100 s
t
p
= 100 s
t
5sec, 2 mm from case
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相關代理商/技術參數
參數描述
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