參數(shù)資料
型號(hào): TSAL4400
廠商: VISHAY SEMICONDUCTORS
元件分類: 激光器
英文描述: LED IrLED 940nm 2-Pin T-1 Bulk
中文描述: Infrared Emitters High Power 940nm 5 Volt 35mW 25 Deg
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 97K
代理商: TSAL4400
TSAL4400
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
1
Document Number: 81006
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
DESCRIPTION
TSAL4400 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 3
Peak wavelength:
λ
p
= 940 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 25°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Package matches with detector TEFT4300
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared remote control units
Free air transmission systems
Infrared source for optical counters and card readers
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
94 8636
PRODUCT SUMMARY
COMPONENT
TSAL4400
I
e
(mW/sr)
30
(deg)
± 25
λ
P
(nm)
940
t
r
(ns)
800
ORDERING INFORMATION
ORDERING CODE
TSAL4400
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
t
p
= 100 μs
Thermal resistance junction/ambient
R
thJA
300
K/W
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