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參數(shù)資料
| 型號(hào)： | TS8MED3260G |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT |
| 中文描述： | 32MB的72針EDO公司上海藥物研究所與16Mx8 3.3VOLT |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 52K |
| 代理商： | TS8MED3260G |
T
T
S
S
8
8
M
E
E
D
D
3
3
2
2
6
6
0
0
G
G
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
Transcend Information Inc.
I
CC3
: /RAS only Refresh Current* (/CAS=V
IH
, /RAS cycling @t
RC
=min)
I
CC4
: Fast Page Mode Current* (/RAS=V
IL
, /CAS Address cycling: t
PC
=min)
I
CC5
: Standby Current (/RAS=/CAS=/W=VCC-0.2V)
I
CC6
: /CAS-Before-/RAS Refresh Current* (/RAS and /CAS cycling @t
RC
=min)
L
I(L)
: Input Leakage Current (Any input 0
I
O(L)
:
Output Leakage Current (Data Out is disabled, 0V
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
=4.2mA)
VIN
V
CC
+0.5V, all other pins not under test=0V)
V
OUT
V
CC
)
Note: I
CC1
,
I
CC3
,
I
CC4
and
I
CC6
are dependent on output loading and cycle rates. Specified values are
obtained with the output open.
I
CC
is specified as an average current. In
I
CC1
and
I
CC3
, address can be
changed maximum once while /RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one
CAPACITANCE
(TA = 25
°
C, Vcc = 5V, f = 1MHz)
mode cycle, t
PC
.
Item
Symbol
Min
Max
Unit
Input capacitance (A
0
~A
10
)
Input capacitance (/WE)
Input capacitance (/RAS0, /RAS2)
Input capacitance (/CAS0~/CSA3)
Data input/output capacitance (DQ0~DQ31)
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
-
-
-
-
-
100
130
35
30
20
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0
TA
70
, Vcc=5.0V
%, See notes 1, 2)
Test condition: V
IH
/V
IL
=2.4V/0.8V, V
OH
/V
OL
=2.4V/0.4V, Output loading CL=100pF
Parameter
Symbol
Min
Max
Unit
Note
Random read or write cycle time
t
RC
110
ns
Access time from /RAS
t
RAC
60
ns
3,4
Access time from /CAS
t
CAC
15
ns
3,4,5
Access time from column address
t
CLZ
30
ns
3,10
/CAS to output in Low-Z
t
RC
0
ns
3
Output buffer turn-off delay
t
OFF
0
15
ns
6
Transition time (rise and fall)
t
T
3
50
ns
2
/RAS precharge time
t
RP
40
ns
/RAS pulse width
t
RAS
60
10K
ns
/RAS hold time
t
RSH
15
ns
/CAS hold time
t
CSH
60
ns
/CAS pulse width
t
CAS
10
10K
ns
/RAS to /CAS delay time
t
RCD
20
45
ns
4
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