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TS7800B series
2-8
2005/01 rev. B
TS7805B Electrical Characteristics
(Vin=10V, Iout=500mA, 0
o
C
≤
Tj
≤
125
o
C, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.)
Parameter
Symbol
Test Conditions
Tj=25
o
C
Min
4.80
Typ
5
Max
5.20
Unit
Output voltage
Vout
7.5V
≤
Vin
≤
20V, 10mA
≤
Iout
≤
1.5A,
PD
≤
15W
7.5V
≤
Vin
≤
25V
Tj=25
o
C
8V
≤
Vin
≤
12V
10mA
≤
Iout
≤
1.5A
Tj=25
o
C
250mA
≤
Iout
≤
750mA
Iout=0, Tj=25
o
C
4.75
5
5.25
V
--
3
100
Line Regulation
REGline
--
1
50
--
15
100
Load Regulation
REGload
--
5
50
mV
Quiescent Current
Iq
--
4.2
8
7.5V
≤
Vin
≤
25V
10mA
≤
Iout
≤
1.5A
10Hz
≤
f
≤
100KHz, Tj=25
o
C
f=120Hz, 8V
≤
Vin
≤
18V
Iout=1.0A, Tj=25
o
C
--
--
1.3
Quiescent Current Change
Δ
Iq
--
--
0.5
mA
Output Noise Voltage
Vn
--
40
--
uV
Ripple Rejection Ratio
RR
62
78
--
dB
Voltage Drop
Vdrop
--
2
--
V
Output Resistance
Rout
f=1KHz
Tj=25
o
C
Tj=25
o
C
--
17
--
m
Ω
mA
Output Short Circuit Current
Ios
--
750
--
Peak Output Current
Io peak
--
2.2
--
A
Temperature Coefficient of
Output Voltage
TS7806B Electrical Characteristics
Δ
Vout/
Δ
Tj
Iout=10mA, 0
o
C
≤
Tj
≤
125
o
C
--
-0.6
--
mV/
o
C
(Vin=11V, Iout=500mA, 0
o
C
≤
Tj
≤
125
o
C, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.)
Parameter
Symbol
Test Conditions
Tj=25
o
C
Min
5.76
Typ
6
Max
6.24
Unit
Output Voltage
Vout
8.5V
≤
Vin
≤
21V, 10mA
≤
Iout
≤
1.5A,
PD
≤
15W
8.5V
≤
Vin
≤
25V
Tj=25
o
C
9V
≤
Vin
≤
13V
10mA
≤
Iout
≤
1.5A
Tj=25
o
C
250mA
≤
Iout
≤
750mA
Iout=0, Tj=25
o
C
6.70
6
6.30
V
--
5
120
Line Regulation
REGline
--
1.5
60
--
14
120
Load Regulation
REGload
--
4
60
mV
Quiescent Current
Iq
--
4.3
8
8.5V
≤
Vin
≤
25V
10mA
≤
Iout
≤
1.5A
10Hz
≤
f
≤
100KHz, Tj=25
o
C
f=120Hz, 9V
≤
Vin
≤
19V
Iout=1.0A, Tj=25
o
C
--
--
1.3
Quiescent Current Change
Δ
Iq
--
--
0.5
mA
Output Noise Voltage
Vn
--
45
--
uV
Ripple Rejection Ratio
RR
59
75
--
dB
Voltage Drop
Vdrop
--
2
--
V
Output Resistance
Rout
f=1KHz
Tj=25
o
C
Tj=25
o
C
--
19
--
m
Ω
mA
Output Short Circuit Current
Ios
--
550
--
Peak Output Current
Io peak
--
2.2
--
A
Temperature Coefficient of
Output Voltage
Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible, and thermal effects must be taken into account separately.
This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Δ
Vout/
Δ
Tj
Iout=10mA, 0
o
C
≤
Tj
≤
125
o
C
--
-0.7
--
mV/
o
C