參數(shù)資料
型號: TS7211
廠商: 意法半導體
英文描述: SINGLE BiCMOS RAIL TO RAIL レPOWER COMPARATOR
中文描述: 單BiCMOS工藝軌至軌レ功率比較
文件頁數(shù): 3/9頁
文件大?。?/td> 88K
代理商: TS7211
TS7211
3/9
ELECTRICAL CHARACTERISTICS
V
CC
+
= 2.7V,
T
AMB
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
IO
Input Offset Voltage (Full common mode range)
TS7211A
T
MIN
T
AMB
T
MAX
TS7211B
T
MIN
T
AMB
T
MAX
7
10
15
18
mV
V
IO
I
IB
Input Offset Voltage Drift with temperature
6
μ
V/
o
C
Input Bias Current
1)
T
MIN
T
AMB
T
MAX
1
300
600
pA
I
IO
Input Offset Current
1)
T
MIN
T
AMB
T
MAX
1
150
300
pA
CMRR
Common-mode Rejection Ratio (0 < V
icm
< 2.7V)
Power Supply Rejection Ratio (2.7 < V
CC
< 10V)
Voltage Gain
2)
Input Common Mode Voltage Range (upper rail)
T
MIN
T
AMB
T
MAX
Input Common Mode Voltage Range (lower rail)
T
MIN
T
AMB
T
MAX
High Level Output Voltage - I
source
= 2.5mA
T
MIN
T
AMB
T
MAX
Low Level Output Voltage - I
sink
= 2.5mA
T
MIN
T
AMB
T
MAX
Supply Current
No load, output low
65
dB
PSRR
80
dB
A
VD
V
ICM
240
dB
3
2.7
V
-0.3
0.0
V
OH
2.35
2.15
2.45
V
V
OL
0.2
0.35
0.45
V
I
CC
No load, output high
6
8
12
14
μ
A
T
PLH
Response Time Low to High (V
ic
= 1.35V, C
L
= 50pF)
Overdrive = 10mV
Overdrive = 100mV
Response Time Low to High (V
ic
= 1.35V, C
L
= 50pF)
Overdrive = 10mV
Overdrive = 100mV
Fall Time (C
L
= 50pF)
Overdrive = 100mV
Rise Time (C
L
= 50pF)
Overdrive = 100mV
1.5
0.6
μ
s
T
PHL
1.5
0.5
μ
s
T
F
20
ns
T
R
20
ns
1) Maximum values include unavoidable inaccurates of the industrial test.
2) Design evaluation.
3) Limits are 100% production tested at +25°C. Limits over temperature are guaranteed through correlation and by design.
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