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參數(shù)資料
| 型號(hào)： | TS61N45CXRF |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Voltage Detector |
| 中文描述： | 電壓檢測(cè)器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 340K |
| 代理商： | TS61N45CXRF |
TS61 Series
Voltage Detector
Absolute Maximum Rating
Parameter
2/7
Version: A07
Symbol
Maximum
Unit
Input Voltage
V
IN
+12
V
Output Current
Io
50
mA
CMOS
(Gnd – 0.3) to (V
IN
+ 0.3)
Output Voltage
N-channel open drain
V
OUT
(Gnd – 0.3) to 12
V
Power Dissipation
SOT-23
P
D
150
mW
Operating Ambient Temperature Range
T
A
-40 ~ +85
o
C
Storage Temperature
Note: Stress above those listed under absolute maximum ratings may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other conditions above those
indicated in the operation section of the specifications is not implied.
T
STG
-65 ~ +150
o
C
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Circuit
Detect Voltage
V
DF
V
DF
x 0.98
V
DF
V
DF
x 1.02
V
1
Hysteresis range
V
HYS
/
V
DF
2
--
8
%
1
V
IN
=1.5V
--
0.7
2.3
V
IN
=2.0V
--
0.8
2.7
V
IN
=3.0V
V
IN
=4.0V
--
0.9
3.0
--
1.0
3.2
Supply Current
V
IN
=5.0V
Iss
--
1.1
3.6
μ
A
2
Operating Voltage
V
DF
(T)=1.6V~6V
V
IN
0.7
--
10.0
V
1
N-channel V
DS
=5V
V
IN
=1.0V
1.0
2.2
--
V
IN
=2.0V
3.0
7.7
--
V
IN
=3.0V
5.0
10.1
--
V
IN
=4.0V
6.0
11.5
--
V
IN
=5.0V
P-channel
V
DS
=2.1V (with CMOS output)
I
OUT
7.0
13.0
--
mA
3
Output Current
V
IN
=8.0V
I
OUT
--
-10.0
-2.0
mA
4
Temperature
Characteristics
-40
°
C
≤
T
A
≤
85
°
C
Δ
V
DF
Δ
T
A
xV
DF
t
DLY
--
±
100
--
ppm /
°
C
ms
--
Delay Time
Note: V
DF
(T): Established Detect Voltage Value, 1.6V ~ 6.0V
±
2% for Standard Voltage Detectors
Release Voltage: V
DR
= V
DF
+ V
HYS
Vdr V
OUT
inversion
--
--
0.2
5
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