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參數(shù)資料
| 型號(hào)： | TS420-600T |
| 英文描述： | 4A SCRS |
| 中文描述： | 第4A沙特遙感中心 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | TS420-600T |
TS420 Series
4/8
Fig. 4:
Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I2t.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]
IGT
IH & IL
Rgk = 1k
Tj(°C)
IH[Rgk] / IH[Rgk = 1k ]
Rgk(k
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.10
1.00
10.00
Tj=125°C
VD=0.67xVDRM
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
Rgk(
)
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
VTj = 125°C
Rgk = 220
dV/dt[Cgk] / dV/dt [Rgk = 220
]
Cgk(nF)
1
10
100
1000
0
5
10
15
20
25
30
35
ITSM(A)
Non repetitive
TcRepetitive
Number of cycles
One cycle
tp = 10ms
0.01
0.10
1.00
10.00
1
10
100
300
ITSM(A),I
2
t(A
2
s)
Tj initial = 25°C
ITSM
I
2
t
lidI/dt
tp(ms)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TS420-700B | 4A SCRS |
| TS420-700H | 4A SCRS |
| TS420-700T | THYRISTOR 4A |
| TS420-600B | 4A SCRs |
| TS420 | 4A SCRs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TS420-600T | 制造商:STMicroelectronics 功能描述:THYRISTOR 4A 600V TO-220 |
| TS420-600T-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4A SCRs |
| TS420-700B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4A SCRS |
| TS420-700B-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4A SCRs |
| TS420-700H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4A SCRS |
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