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參數(shù)資料
| 型號(hào)： | TS13007CZ |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | High Voltage NPN Transistor |
| 中文描述： | 高壓NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | TS13007CZ |
TS13007
1-2
2003/12 rev. A
TS13007
High Voltage NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 400V
BV
CBO
= 700V
Ic = 8A
V
CE (SAT)
, = 3V @ Ic / Ib = 8A / 2A
Features
Suitable for switching regulator and motor control
High speed switching
Structure
Silicon triple diffused type.
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TS13007CZ
Tube
TO-220
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
700V
400V
9
8
16
4
80
+150
- 65 to +150
Unit
V
V
V
A
DC
Pulse
Base Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
I
B
P
D
T
J
T
STG
A
W
o
C
o
C
Tc=25
o
C
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
EB
= 9V, I
C
= 0
I
C
/ I
B
= 2A / 0.4A
I
C
/ I
B
= 5A / 1A
I
C
/ I
B
= 8A / 2A
I
C
/ I
B
= 2A / 0.4A
I
C
/ I
B
= 5A / 1A
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 5A
V
CE
= 10V, I
C
= 0.5A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 5A,
I
B1
= 1A, I
B2
= - 1A, R
L
= 50ohm
BV
CBO
BV
CEO
BV
EBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
V
BE(SAT)1
V
BE(SAT)2
h
FE 1
h
FE 2
f
T
Cob
t
ON
t
STG
t
f
700
400
9
--
--
--
--
--
--
8
5
4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1
1
2
3
1.2
1.6
60
30
--
--
1.6
3
0.7
V
V
V
mA
V
Base-Emitter Saturation Voltage
V
DC Current Gain
Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
Note : pulse test: pulse width <=300uS, duty cycle <=2%
MHz
pF
uS
uS
uS
110
--
--
--
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