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參數(shù)資料
| 型號： | TS13001CT |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | High Voltage NPN Transistor |
| 中文描述： | 高壓NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | TS13001CT |
TS13001
1-2
2003/12 rev. B
TS13001
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
Features
High voltage
.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
BV
CEO
= 400V
BV
CBO
= 500V
Ic = 0.1A
V
CE (SAT)
, = 0.5V @ Ic / Ib = 50mA / 10mA
Ordering Information
Part No.
Packing
Package
TS13001CT
Bulk
TO-92
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
500V
V
Collector-Emitter Voltage
V
CEO
400V
V
Emitter-Base Voltage
V
EBO
9
V
DC
0.1
Collector Current
Pulse
I
C
0.3
A
Collector Power Dissipation
TO-92
P
D
0.6
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 5mS, Duty <= 10%
Electrical Characteristics
T
STG
- 55 to +150
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Voltage
I
C
= 10mA, I
B
= 0
I
C
= 10mA, I
E
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 500V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
/ I
B
= 50mA / 10mA
V
CE
= 5V, I
C
= 20mA
V
CB
= 10V, f = 0.1MHz
V
CE
= 250V, I
C
= 5 Ib,
Ib1=Ib2=40mA
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
Cob
500
--
--
V
Collector-Emitter Breakdown Voltage
400
--
--
V
Emitter-Base Breakdown Voltage
9
--
--
V
Collector Cutoff Current
--
--
100
uA
Emitter Cutoff Current
--
--
0.01
uA
Collector-Emitter Saturation Voltage
--
--
0.5
V
DC Current Gain
10
--
40
Output Capacitance
--
4
--
pF
Storage Time
ts
--
--
2.0
Fall Time
Note : pulse test: pulse width <=5mS, duty cycle <=10%
tf
--
--
0.8
uS
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