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參數(shù)資料
| 型號(hào)： | TQTRX |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | Advanced Passives & MESFET Foundry Service |
| 中文描述： | 先進(jìn)的無源 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 173K |
| 代理商： | TQTRX |
Released Process
Production Process
TQTRx
TQTRp
Advanced Passives & MESFET Foundry Service
Features
Metal 3 - 5 um
www.triquint.com
TriQuint Semiconductor
Hillsboro, Oregon 97124
Hillsboro, Oregon 97124
Email: info@triquint.com
Page 1 of 7; Rev 1.0 11/15/01
Page 1 of 6; Rev 2.1 8/10/02
TTQTRp Process Cross-Section
High Density Interconnects:
3 Global
1 Local
9 μm Total Thickness
High-Q Passives; >50 @ 2 GHz
0.6 μm Gate Length MESFET Op-
tional: Power & General Purpose
D-FETs; E-FET
Schottky-Barrier Diodes
Bulk & Thin Film Resistors
High Value Capacitors
Dielectric Encapsulated Metals
Planarized Surface; simplified
plastic packaging
Substrate Vias Available
Volume Production Processes
Low Cost Passives-Only Option
Applications
Active and/or Passive
Components
Circuits Requiring High Q Passive
Elements
Ideal for Mixers, Converters, and
Phase-Shifters with Baluns, Trans-
formers, E-M Structures
Mobile Phone Front End Blocks
RF Module Front-Ends
General Description
TriQuint’s TQTRp process has advanced metal systems and
MESFET devices. It is targeted at high performance, small size
passive-only or passive/active circuits and utilizes over 9 μm of
gold metal. High density interconnections are accomplished
with three thick global and one surface metal interconnect lay-
ers. The four metal layers are encapsulated in a high perform-
ance dielectric that allows wiring flexibility and plastic packag-
ing simplicity. Precision NiCr resistors, implanted resistors,
and high value MIM capacitors are included. Advanced 0.6 μm
enhancement/depletion mode MESFET devices include an inte-
grated power MESFET, general purpose D-Mode MESFET, and
Enhancement Mode MESFET and are based on the TQTRx
process, currently TriQuint’s highest volume process. The
TQTRp process is available on 150-mm (6 inch) wafers.
Semiconductors for Communications
2300 NE Brookwood Pkwy
2300 NE Brookwood Pkwy
PhFax: 503-615-8905
Fax: 503-615-8905
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Isolation Implant
Semi-Insulating GaAs Substrate
MIM Metal
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2 um
N+
Passivation Via
Metal 2
Metal 3
Dielectric
Dielectric
Metal 2 - 2 um
Dielectric
N-/P- Channel
NiCr
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