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參數(shù)資料
| 型號(hào)： | TQ9147B |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | 2-Stage AMPS Power Amplifier IC |
| 中文描述： | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SO-16 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | TQ9147B |
WIRELESS COMMUNICATIONS DIVISION
For additional information and latest specifications, see our website:
www.triquint.com
1
Electrical Characteristics
TQ9147B
DATA SHEET
2-Stage AMPS
Power Amplifier IC
Features
§
High Efficiency
§
+32 dBmOutput Power
§
50
W
Matched Input
§
SO-16 Plastic Package
§
Monolithic Power Amp
Applications
§
AMPS Mobile Phones
§
CDPD Modems
§
General ISMBand Applications
1
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
RF
OUT
RF
OUT
GND
GND
GND
RF
IN
GND
GND
GND
GND
GND
GND
GND
V
G1
V
G2
V
D1
Product Description
The TQ9147 is a high efficiency two stage GaAs MESFET power amplifier IC
intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 -
849 MHz) band. The TQ9147 requires mnimal external RF circuitry and operates
froma 4.8-Volt supply. With its flexible, off-chip, single component output matching
circuit, the TQ9147 is suitable for use in other applications near the cellular band,
such as 900 MHz ISMapplications.
The TQ9147 utilizes a space saving SO-16 plastic package that mnimzes board
area and cost.
Electrical Specifications
1
Parameter
Mn
Typ
Max
Units
Output Power
+31.5
+32
dBm
Efficiency
55
60
%
Note 1: Test Conditions: V
DD
= 4.8 V, P
IN
= +7 dBm
Freq. = 824 & 849 MHz,
T
C
= 25
°
C,
Min/max values 100% production tested.
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