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參數(shù)資料
| 型號： | TPV8100B |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.438 X 0.450 INCH, FM-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 161K |
| 代理商： | TPV8100B |
1
TPV8100B
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
To be used class AB for TV band IV and V.
Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCER
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
65
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
12
Adc
Total Device Dissipation @ 25
°
C Case
Derate above 25
°
C
215
1.25
Watts
W/
°
C
Operating Junction Temperature
TJ
Tstg
200
°
C
Storage Temperature Range
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
0.8
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75
)
V(BR)CER
30
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
4
—
—
Vdc
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
65
—
—
Vdc
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75
)
ICER
—
—
10
mA
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition.
Order this document
by TPV8100B/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 470–860 MHz
NPN SILICON
RF POWER TRANSISTOR
CASE 398–03, STYLE 1
REV 6
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| TPV8100B_D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TPV8100B 470-860 MHz. 150 W. 28 V RF Power Transistor - Archived |
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