參數(shù)資料
型號(hào): TPS62302YZD
廠商: Texas Instruments, Inc.
英文描述: 500-mA, 3-MHz SYNCHRONOUS STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING
中文描述: 500毫安,3 MHz的同步降壓轉(zhuǎn)換器芯片級(jí)封裝
文件頁(yè)數(shù): 3/31頁(yè)
文件大小: 1635K
代理商: TPS62302YZD
www.ti.com
DISSIPATION RATINGS
(1)
ELECTRICAL CHARACTERISTICS
V
I
= 3.6 V, V
O
= 1.6 V, EN = V
I
, MODE/SYNC = GND, L = 1
μ
H, C
O
= 10
μ
F, T
A
= -40
°
C to 85
°
C, typical values are at
T
A
= 25
°
C (unless otherwise noted)
TPS62300, TPS62301, TPS62302
TPS62303, TPS62305, TPS62311
TPS62313, TPS62320, TPS62321
SLVS528B–JULY 2004–REVISED JUNE 2005
POWER RATING
FOR T
A
25
°
C
2050 mW
400 mW
400 mW
DERATING FACTOR
ABOVE T
A
= 25
°
C
21 mW/
°
C
4 mW/
°
C
4 mW/
°
C
PACKAGE
R
θ
JA
DRC
YZD
YED
49
°
C/W
250
°
C/W
250
°
C/W
(1)
Maximum power dissipation is a function of T
J
(max),
θ
JA
and T
A
. The maximum allowable power dissipation at any allowable ambient
temperature is P
D
= [T
J
(max)-T
A
] /
θ
JA
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
V
I
Input voltage range
2.7
6
V
TPS6230x
TPS6232x
I
O
= 0 mA. PFM mode enabled, device not switching
86
105
μ
A
Operating
quiescent
current
TPS6231x
I
O
= 0 mA. PFM mode enabled, device not switching
86
120
μ
A
I
Q
TPS6230x
TPS6231x
TPS6232x
I
= 0 mA. Switching with no load
(MODE/SYNC = VIN)
3.6
mA
I
(SD)
Shutdown current
EN = GND
0.1
1
μ
A
TPS6230x
TPS6232x
2.40
2.55
V
Undervoltage
lockout threshold
V
(UVLO)
TPS6231x
2.00
2.20
V
ENABLE, MODE/SYNC
V
(EN)
V
(MODE/SYNC)
V
(EN)
,
V
(MODE/SYNC)
I
(EN)
,
I
(MODE/SYNC)
POWER SWITCH
EN high-level input voltage
1.2
V
MODE/SYNC high-level input voltage
1.3
V
EN, MODE/SYNC low-level input
voltage
0.4
V
EN, MODE/SYNC input leakage
current
EN, MODE/SYNC = GND or VIN
0.01
1
μ
A
V
I
= V
(GS)
= 3.6 V
V
I
= V
(GS)
= 2.8 V
V
(DS)
= 6 V
V
I
= V
(GS)
= 3.6 V
V
I
= V
(GS)
= 2.8 V
420
750
m
m
μ
A
m
m
r
DS(on)
P-channel MOSFET on resistance
520
1000
I
lkg(PMOS)
P-channel leakage current
1
330
750
r
DS(on)
N-channel MOSFET on resistance
400
1000
Discharge resistor for power-down
sequence (TPS6232x only)
R
(DIS)
30
50
I
lkg(NMOS)
N-channel leakage current
V
(DS)
= 6 V
2.7 V
V
I
6 V
2.7 V
V
I
6 V
2.7 V
V
I
6 V
1
μ
A
mA
P-MOS current limit
670
780
890
N-MOS current limit - sourcing
550
720
890
mA
N-MOS current limit - sinking
–460
–600
–740
mA
Input current limit under short-circuit
conditions
V
O
= 0 V
390
mA
Thermal shutdown
150
°
C
°
C
Thermal shutdown hysteresis
20
3
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TPS62302YZDR 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 1.6V 500-mA 3-MHz Step-Down Converter RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
TPS62302YZDT 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 1.6V 500-mA 3-MHz Step-Down Converter RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
TPS62303DRCR 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 1.8V 500-mA 3-MHz Step-Down Converter RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
TPS62303DRCRG4 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 1.8V 500-mA 3-MHz Step-Down Converter RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5
TPS62303YZDR 功能描述:直流/直流開(kāi)關(guān)調(diào)節(jié)器 1.8V 500-mA 3-MHz Step-Down Converter RoHS:否 制造商:International Rectifier 最大輸入電壓:21 V 開(kāi)關(guān)頻率:1.5 MHz 輸出電壓:0.5 V to 0.86 V 輸出電流:4 A 輸出端數(shù)量: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN 4 x 5