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參數(shù)資料
| 型號(hào)： | TPS615 |
| 英文描述： | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | LED-2B |
| 中文描述： | 光電晶體管|叩| 800NM峰值波長(zhǎng)| 2000萬|發(fā)光二極管- 2B衛(wèi)星 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 392K |
| 代理商： | TPS615 |
TPS61000, TPS61001, TPS61002, TPS61003, TPS61004, TPS61005, TPS61006, TPS61007
SINGLE-AND DUAL-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD
SLVS279B – MARCH 2000 – REVISED AUGUST 2000
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range, V
BAT
= 1.2 V, EN
= V
BAT
(unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IQ
Quiescent current drawn from power source
(current into VBAT and into VOUT)
Shutdown current from power source
(current into VBAT and into VOUT)
IO = 0 mA
VEN = VI, VO = 3.4 V
VBAT
VOUT
44
μ
A
6
ISD
VEN = 0 V
0.2
5
μ
A
VIL
EN low-level input voltage
0.2
×
VBAT
V
VIH
EN high-level input voltage
0.8
×
VBAT
V
EN input current
EN = GND or VBAT
VLBI voltage decreasing
0.1
1
μ
A
mV
VIL
LBI low-level input voltage threshold
470
500
530
LBI input hysteresis
10
mV
μ
A
V
μ
A
II
VOL
LBI input current
0.01
0.1
LBO low-level output voltage
VLBI = 0 V, VO = 3.3 V, IOL = 50
μ
A
VLBI = 650 mV, VLBO = 3.3 V
0.04
0.2
LBO output leakage current
0.01
1
IFB
FB input bias current
(TPS61000, TPS61007 only)
VFB = 500 mV
0.01
0.1
μ
A
PARAMETER MEASUREMENT INFORMATION
List of Components:
IC1:
Only fixed output versions
(unless otherwise noted)
L1:
Coilcraft DO3308P–333
D1:
Motorola Schottky Diode
MBRM120LT3
CI:
Ceramic
CO:
Ceramic
5
6
TPS6100x
9
8
1
10
3
2
7
4
SW
VBAT
LBI
NC/FBGND
EN
VOUT
LBO
FB
COMP
GND
Low Battery
Warning
R4
10 k
R3
ON
OFF
R2
R1
Ci
10
μ
F
L1
D1
C1
100 pF
C2
33 nF
Co
22
μ
F
33
μ
H
Figure 1. Circuit Used for Typical Characteristics Measurements
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