參數(shù)資料
型號: TPS40056PWPG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝: PLASTIC, HTSSOP-16
文件頁數(shù): 8/32頁
文件大?。?/td> 747K
代理商: TPS40056PWPG4
TPS40056
SLVS612 APRIL 2006
16
www.ti.com
APPLICATION INFORMATION
dv/dt Induced TurnOn
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused
by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage, on
the MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the
gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large
shoot-through currents. Therefore, the SR MOSFET should be chosen so that the CGD capacitance is smaller
than the CGS capacitance.
High Side MOSFET Power Dissipation
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by equation (26).
P
COND + IRMS
2
R
DS(on)
1
) TC
R
T
J * 25
(Watts)
where:
D TCR is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer but is typically ranges between
.0035 ppm/
_C and .010 ppm/_C.
The IRMS current for the high side MOSFET is described in equation (27).
I
RMS + IO
d
Amperes
RMS
The switching losses for the high-side MOSFET are descibed in equation (28).
P
SW(fsw) + VIN
I
OUT
t
SW
f
SW (Watts)
where:
D IO is the DC output current
D tSW is the switching rise time, typically < 20 ns
D fSW is the switching frequency
Typical switching waveforms are shown in Figure 8.
(26)
(27)
(28)
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