參數(shù)資料
型號(hào)： TPS40055PWP
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝： GREEN, PLASTIC, HTSSOP-16
文件頁(yè)數(shù)： 11/35頁(yè)
文件大小： 866K
代理商： TPS40055PWP
HIGH-SIDE MOSFET POWER DISSIPATION
P
COND + IRMS
2
R
DS(on)
1 ) TCR
T
J * 25
O
C
(Watts)
(30)
I
RMS + IOUT
d
A
RMS
(31)
P
SW(fsw) + VIN
I
OUT
t
SW
f
SW (Watts)
(32)
UDG-02139
I
ANTI-CROSS
CONDUCTION
SYNCHRONOUS
RECTIFIER ON
BODY DIODE
CONDUCTION
BODY DIODE
CONDUCTION
HIGH SIDE ON
ID1
ID2
IO
SW
0
}
d
1-d
P
T +
T
J * TA
qJA
(Watts)
(33)
www.ti.com ...................................................................................................................................... SLUS593F – DECEMBER 2003 – REVISED SEPTEMBER 2008
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by Equation 30.
where
TC
R is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between 3500
ppm/°C and 7000 ppm/°C.
The IRMS current for the high-side MOSFET is described in Equation 31.
The switching losses for the high-side MOSFET are descibed in Equation 32.
where
I
O is the DC output current
t
SW is the switching rise time, typically < 20 ns
f
SW is the switching frequency
Typical switching waveforms are shown in Figure 14.
Figure 14. Inductor Current and SW Node Waveforms
The maximum allowable power dissipation in the MOSFET is determined by Equation 33.
where
P
T = PCOND + PSW(fsw) (W)
θ
JA is the package thermal impedance
Copyright 2003–2008, Texas Instruments Incorporated
19
Product Folder Link(s): TPS40054 TPS40055 TPS40057
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