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參數資料
| 型號： | TPS3606-33DGSR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO10 |
| 封裝： | GREEN, PLASTIC, MSOP-10 |
| 文件頁數： | 2/18頁 |
| 文件大?。?/td> | 507K |
| 代理商： | TPS3606-33DGSR |
TPS360633
BATTERY BACKUP SUPERVISOR FOR LOW POWER PROCESSORS
SLVS335C DECEMBER 2000 REVISED JANUARY 2007
10
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
rDS(on)
Static drain-source on-state resistance (VDD to VOUT)
vs Output current
2
rDS(on)
Static drain-source on-state resistance (VBAT to VOUT) vs Output current
3
IDD
Supply current
vs Supply voltage
4
IDD
Supply current
vs Battery supply
5
VIT
Input threshold voltage at RESET
vs Free-air temperature
6
VOH
High-level output voltage at RESET
vs High-level output current
7, 8
VOH
High-level output voltage at PFO
vs High-level output current
9, 10
VOL
Low-level output voltage at RESET
vs Low-level output current
11, 12
Minimum pulse duration at VDD
vs Threshold voltage overdrive at VDD
13
Minimum pulse duration at PFI
vs Threshold voltage overdrive at PFI
14
Figure 2
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
50
75
100
125
150
175
200
STATIC DRAIN SOURCE ON-STATE RESISTANCE
(VDD TO VOUT)
vs
OUTPUT CURRENT
IO Output Current mA
TA = 40°C
TA = 25°C
TA = 85°C
TA = 0°C
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
Static
Drain
Source
On-State
Resistance
r DS(on)
V
OUT
(V
DD
to
)
Figure 3
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
50
75
100
125
150
175
200
IO Output Current mA
TA = 40°C
TA = 25°C
TA = 85°C
TA = 0°C
VBAT = 3.3 V
MSWITCH = VDD
STATIC DRAIN SOURCE ON-STATE RESISTANCE
(VBAT TO VOUT)
vs
OUTPUT CURRENT
Static
Drain
Source
On-State
Resistance
r DS(on)
V
OUT
(V
BA
T
to
)
www.ti.com
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| TPS3606-33DGSRG4 | 功能描述:監(jiān)控電路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數: 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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