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參數(shù)資料
| 型號： | TPS310333DVB |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | ULTRALOW SUPPLY CURRENT/SUPPLY VOLTAGE SUPERVISORY CIRCUITS |
| 中文描述： | 超低電源電流/電源電壓監(jiān)控電路 |
| 文件頁數(shù)： | 11/22頁 |
| 文件大?。?/td> | 361K |
| 代理商： | TPS310333DVB |
SLVS363B AUGUST 2001 REVISED SEPTEMBER 2004
www.ti.com
11
electrical characteristics over recommended operating conditions (unless otherwise noted)
PARAMETERS
TEST CONDITIONS
VDD = 3.3 V, IOH = 3 mA
VDD = 1.8 V, IOH = 2 mA
VDD = 1.5 V, IOH = 1 mA
VDD = 0.9 V, IOH = 0.4 mA
VDD = 0.5 V, IOH = 5
μ
A
VDD = 3.3 V, IOL = 3 mA
VDD = 1.5 V, IOL = 2 mA
VDD = 1.2 V, IOL = 1 mA
VDD = 0.9 V, IOL = 500
μ
A
VDD = 0.4 V, IOL = 5
μ
A
MIN
TYP
MAX
UNIT
0.8 VDD
VOH
High-level output voltage
V
0.7
×
VDD
Low-level output
voltage
0.3
VOL
V
RESET only
0.1
TPS31xxE09
0.854
0.86
0.866
TPS31xxE12
1.133
1.142
1.151
VIT
Negative-going input
threshold voltage (1)
TPS31xxE15
TA = 25
°
C
1.423
1.434
1.445
V
TPS31xxE16
1.512
1.523
1.534
TPS31xxH20
1.829
1.843
1.857
TPS31xxK33
2.919
2.941
2.963
VIT(S)
Negative-going input
threshold voltage (1)
SENSE, PFI
VDD
≥
0.8 V, TA = 25
°
C
0.542
0.551
0.559
V
0.8 V
≤
VIT
<
1.5 V
1.6 V
≤
VIT
<
2.4 V
2.5 V
≤
VIT
<
3.3 V
TA = 40
°
C to 85
°
C
VDD
≥
0.8 V
MR = VDD, VDD = 3.3 V
SENSE, PFI, WDI = VDD,
VDD = 3.3 V
MR = 0 V, VDD = 3.3 V
SENSE, PFI, WDI = 0 V, VDD = 3.3 V
20
Vhys
Hysteresis at VDD input
30
mV
50
T(K)
Vhys
Temperature coefficient of VIT, PFI, SENSE
Hysteresis at SENSE, PFI input
0.012
0.019
%/K
15
mV
MR
25
25
IIH
High-level input current
SENSE, PFI, WDI
25
25
nA
IIL
Low-level input current
MR
47
33
25
μ
A
nA
SENSE, PFI, WDI
25
25
IOH
High-level output
current at RESET (2)
Open drain
VDD = VIT + 0.2 V, VOH = 3.3 V
200
nA
VDD
>
VIT (average current),
VDD
<
1.8 V
VDD
>
VIT (average current),
VDD
>
1.8 V
VDD
<
VIT, VDD
<
1.8 V
VDD
<
VIT, VDD
>
1.8 V
1.2
3
IDD
Supply current
2
4.5
μ
A
22
27
Internal pull-up resistor at MR
70
100
130
k
Ci
Input capacitance at MR, SENSE, PFI, WDI
(1)To ensure the best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1
μ
F) should be placed close to the supply terminals.
(2)Also refers to RSTVDD and RSTSENSE
VI = 0 V to VDD
1
pF
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